INFLUENCE OF AL_XGA_1-XAS LAYER THICKNESS ON THRESHOLD CURRENT DENSITY AND DIFFERENTIAL QUANTUM EFFICIENCY FOR GAAS-AL_XGA_1-XAS DH LASERS.CASEY HC JR; PANISH MB.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 1393-1395; BIBL. 7 REF.Article

COSTRUZIONE E CARATTERIZZAZIONE DI DISPOSITIVI LASER A SEMICONDUTTORE A DOPPIA ETEROGIUNZIONE. = CONSTRUCTION ET CARACTERISTIQUES DES DISPOSITIFS LASER A SEMICONDUCTEUR A DOUBLE HETEROJONCTIONDONZELLI G; FLORES C; RANDONE G et al.1976; ALTA FREQ.; ITAL.; DA. 1976; VOL. 45; NO 5; PP. 279-288; BIBL. 16 REF.Article

DISTRIBUTED-FEEDBACK COUPLING IN GA_1-X AL_XAS DOUBLE-HETEROSTRUCTURE LASERS: EFFECT OF ALUMINIUM CONCENTRATION.BOYD JT; ANDERSON DB.1975; APPL. OPT.; U.S.A.; DA. 1975; VOL. 14; NO 9; PP. 2199-2202; BIBL. 18 REF.Article

LOW-THRESHOLD LPE IN_1-X'GA_X'P_1-Z'/IN_1-XGA_XP_1-ZAS_Z/IN_1-X' GA_X'P_1-Z'AS_Z' YELLOW DOUBLE-HETEROJUNCTION LASER DIODES (J<10⁴ A/CM², LAMBDA EQUIV. A 5850 A, 77^OK).HITCHENS WR; HOLONYAK N JR; WRIGHT PD et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 4; PP. 245-247; BIBL. 14 REF.Article

VERY LOW-THRESHOLD DOUBLE-HETEROJUNCTION AL_XGA_1-X AS INJECTION LASERS.ETTENBERG M.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 12; PP. 652-654; BIBL. 9 REF.Article

ANALYTICAL APPROXIMATION FOR THE REFLECTIVITY OF DH LASERSBUUS J.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 12; PART. 1; PP. 2256-2257; BIBL. 2 REF.Article

SATURATION OF THE JUNCTION VOLTAGE IN STRIPE-GEOMETRY (ALGA) AS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS.PAOLI TL; BARNES PA.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 12; PP. 714-716; BIBL. 19 REF.Article

GAAS-AL_XGA_1-XAS INJECTION LASERS WITH DISTRIBUTOR BRAGG REFLECTORS.REIHART FK; LOGAN RA; SHANK CV et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 1; PP. 45-48; BIBL. 16 REF.Article

GROWTH OF DARK LINES FROM CRYSTAL DEFECTS IN GAAS-GAALAS DOUBLE HETEROSTRUCTURE CRYSTALS.ITO R; NAKASHIMA H; NAKADA O et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 8; PP. 1321-1322; BIBL. 8 REF.Article

METHOD FOR DETERMINING EFFECTIVE NONRADIATIVE LIFETIME AND LEAKAGE LOSSES IN DOUBLE-HETEROSTRUCTURE LASERSVAN OPDORP C; 'T HOOFT GW.1981; J. APPL. HYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 3827-3839; BIBL. 38 REF.Article

LEAD-TIN TELLURIDE DOUBLE-HETEROJUNCTION LASER DIODES: THEORY AND EXPERIMENT.TOMASETTA LR; FONSTAD CG.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 384-390; BIBL. 18 REF.Article

RAPID DEGRADATION IN DOUBLE-HETEROSTRUCTURE LASERS. II. SEMIQUANTITATIVE ANALYSES ON THE PROPAGATION OF DARK LINE DEFECTS.NANNICHI Y; MATSUI J; ISHIDA K et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 10; PP. 1561-1568; BIBL. 24 REF.Article

CHARACTERISTICS OF THE JUNCTION-STRIPE-GEOMETRY GAAS-GAALAS DOUBLE-HETEROSTRUCTURE LASERS.NAMIZAKI H; KAN H; ISHII M et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 10; PP. 1618-1623; BIBL. 7 REF.Article

PHOTON RECYCLING IN SEMICONDUCTOR LASERS.STERN F; WOODALL JM.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3904-3906; BIBL. 10 REF.Article

GAAS DOUBLE HETEROSTRUCTURE LASING BEHAVIOR ALONG THE JUNCTION PLANE.HAKKI BW.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 1; PP. 292-302; BIBL. 26 REF.Article

RAPID DEGRADATION IN DOUBLE-HETEROSTRUCTURE LASERS. I. PROPOSAL OF A NEW MODEL FOR THE DIRECTIONAL GROWTH OF DISLOCATION NETWORKS.MATSUI J; ISHIDA K; NANNICHI Y et al.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 10; PP. 1555-1560; BIBL. 18 REF.Article

STRIPED-SUBSTRATE DOUBLE-HETEROSTRUCTURE LASERS.BURNHAM RD; SCIFRES DR; TRAMONTANA JC et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 418-420; BIBL. 5 REF.Article

AL_XGA_1-XAS DOUBLE-HETEROSTRUCTURE RIB-WAVEGUIDE INJECTION LASER.LEE TP; BURRUS CA; MILLER BJ et al.1975; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1975; VOL. 11; NO 7 PART. 2; PP. 432-435; BIBL. 12 REF.Article

HOW MUCH AL IN THE ALGAAS-GAAS LASER.RODE DL.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 9; PP. 3887-3891; BIBL. 31 REF.Article

SPECTRAL BEHAVIORS OF SPONTANEOUSLY PULSING DOUBLE-HETEROSTRUCTURE INJECTION LASERS.CHINONE N; ITO R.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 3; PP. 575-576; BIBL. 8 REF.Article

PHASE SENSITIVITY AND LINEWIDTH NARROWING IN A FOX-SMITH CONFIGURED SEMICONDUCTOR LASERPETUCHOWSKI SJ; MILSS RO; DANDRIDGE A et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 4; PP. 302-304; BIBL. 13 REF.Article

A SIMPLE METHOD OF DETERMINING THE AL CONCENTRATION IN GAALAS LAYERS USED IN DOUBLE HETEROSTRUCTURE LASERSBROSSON P; RIBERO CA.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 887-888; BIBL. 6 REF.Article

CURRENT LIMITATION FOR THE FUNDAMENTAL TRANSVERSE MODE OPERATION OF BURIED HETEROSTRUCTURE LASERSHARTH W; CLAASSEN M; GROTHE H et al.1978; ARCH. ELEKTRON. UBERTRAG.-TECH.; DEU; DA. 1978; VOL. 32; NO 4; PP. 137-139; ABS. GER; BIBL. 13 REF.Article

DESIGN CURVES FOR DOUBLE-HETEROJUNCTION LASER DIODES.BUTLER JK; KRESSEL H.1977; R.C.A. REV.; U.S.A.; DA. 1977; VOL. 38; NO 4; PP. 542-558; BIBL. 7 REF.Article

IMPROVED HETEROSTRUCTURE-LASER LIGHT-OUTPUT LINEARITY BY ANTIREFLECTIVE COATING.MILLER RC; JOYCE WB.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 11; PP. 764-765Article